Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Zener - Single / GDZ12B-G3-18
Herstellerteilenummer | GDZ12B-G3-18 |
---|---|
Zukünftige Teilenummer | FT-GDZ12B-G3-18 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101 |
GDZ12B-G3-18 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Spannung - Zener (Nom) (Vz) | 12V |
Toleranz | ±4% |
Leistung max | 200mW |
Impedanz (max.) (Zzt) | 30 Ohms |
Strom - Rückwärtsleckage @ Vr | 100nA @ 9V |
Spannung - Vorwärts (Vf) (Max) @ If | - |
Betriebstemperatur | -55°C ~ 150°C |
Befestigungsart | Surface Mount |
Paket / fall | SC-76, SOD-323 |
Supplier Device Package | SOD-323 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
GDZ12B-G3-18 Gewicht | kontaktiere uns |
Ersatzteilnummer | GDZ12B-G3-18-FT |
BZX384C3V6-G3-18
Vishay Semiconductor Diodes Division
BZX384C3V6-HE3-18
Vishay Semiconductor Diodes Division
BZX384C3V9-E3-18
Vishay Semiconductor Diodes Division
BZX384C3V9-G3-08
Vishay Semiconductor Diodes Division
BZX384C3V9-G3-18
Vishay Semiconductor Diodes Division
BZX384C3V9-HE3-08
Vishay Semiconductor Diodes Division
BZX384C3V9-HE3-18
Vishay Semiconductor Diodes Division
BZX384C43-E3-08
Vishay Semiconductor Diodes Division
BZX384C43-E3-18
Vishay Semiconductor Diodes Division
BZX384C43-G3-08
Vishay Semiconductor Diodes Division
XC3S400AN-4FT256C
Xilinx Inc.
EPF10K10ATC100-3
Intel
EP3SE50F484C4N
Intel
M1AGL600V5-CS281I
Microsemi Corporation
A40MX04-PQ100M
Microsemi Corporation
LFE2M100E-7F900C
Lattice Semiconductor Corporation
LCMXO640C-3B256I
Lattice Semiconductor Corporation
LFE3-70E-8FN672C
Lattice Semiconductor Corporation
10AX057K2F35I2SG
Intel
5AGXMB7G6F35C6N
Intel