Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Zener - Single / GDZ3V6B-HG3-18
Herstellerteilenummer | GDZ3V6B-HG3-18 |
---|---|
Zukünftige Teilenummer | FT-GDZ3V6B-HG3-18 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101 |
GDZ3V6B-HG3-18 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Spannung - Zener (Nom) (Vz) | 3.6V |
Toleranz | ±2% |
Leistung max | 200mW |
Impedanz (max.) (Zzt) | 100 Ohms |
Strom - Rückwärtsleckage @ Vr | 10µA @ 1V |
Spannung - Vorwärts (Vf) (Max) @ If | - |
Betriebstemperatur | -55°C ~ 150°C |
Befestigungsart | Surface Mount |
Paket / fall | SC-76, SOD-323 |
Supplier Device Package | SOD-323 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
GDZ3V6B-HG3-18 Gewicht | kontaktiere uns |
Ersatzteilnummer | GDZ3V6B-HG3-18-FT |
GDZ22B-E3-08
Vishay Semiconductor Diodes Division
GDZ22B-E3-18
Vishay Semiconductor Diodes Division
GDZ22B-G3-08
Vishay Semiconductor Diodes Division
GDZ22B-G3-18
Vishay Semiconductor Diodes Division
GDZ22B-HE3-08
Vishay Semiconductor Diodes Division
GDZ22B-HE3-18
Vishay Semiconductor Diodes Division
GDZ22B-HG3-08
Vishay Semiconductor Diodes Division
GDZ22B-HG3-18
Vishay Semiconductor Diodes Division
GDZ24B-E3-08
Vishay Semiconductor Diodes Division
GDZ24B-E3-18
Vishay Semiconductor Diodes Division
LCMXO1200E-3TN144I
Lattice Semiconductor Corporation
A54SX08A-2TQ144
Microsemi Corporation
XC4013E-2BG225C
Xilinx Inc.
A3P1000-FGG256I
Microsemi Corporation
ICE40UL1K-SWG16ITR50
Lattice Semiconductor Corporation
EP1K50FC484-3
Intel
5AGXMA7D4F27C4N
Intel
5SGSED8N1F45C2N
Intel
EP4S40G5H40I3N
Intel
XC5VSX35T-1FFG665C
Xilinx Inc.