Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Zener - Single / GDZ8V2B-HE3-18
Herstellerteilenummer | GDZ8V2B-HE3-18 |
---|---|
Zukünftige Teilenummer | FT-GDZ8V2B-HE3-18 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101 |
GDZ8V2B-HE3-18 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Spannung - Zener (Nom) (Vz) | 8.2V |
Toleranz | ±2% |
Leistung max | 200mW |
Impedanz (max.) (Zzt) | 30 Ohms |
Strom - Rückwärtsleckage @ Vr | 500nA @ 5V |
Spannung - Vorwärts (Vf) (Max) @ If | - |
Betriebstemperatur | -55°C ~ 150°C |
Befestigungsart | Surface Mount |
Paket / fall | SC-76, SOD-323 |
Supplier Device Package | SOD-323 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
GDZ8V2B-HE3-18 Gewicht | kontaktiere uns |
Ersatzteilnummer | GDZ8V2B-HE3-18-FT |
GDZ36B-E3-18
Vishay Semiconductor Diodes Division
GDZ36B-G3-08
Vishay Semiconductor Diodes Division
GDZ36B-G3-18
Vishay Semiconductor Diodes Division
GDZ36B-HE3-08
Vishay Semiconductor Diodes Division
GDZ36B-HE3-18
Vishay Semiconductor Diodes Division
GDZ36B-HG3-08
Vishay Semiconductor Diodes Division
GDZ36B-HG3-18
Vishay Semiconductor Diodes Division
GDZ3V0B-E3-08
Vishay Semiconductor Diodes Division
GDZ3V0B-E3-18
Vishay Semiconductor Diodes Division
GDZ3V0B-G3-08
Vishay Semiconductor Diodes Division
XC2V8000-5FFG1517I
Xilinx Inc.
XC3S200A-5VQ100C
Xilinx Inc.
M1A3P1000-1FGG484
Microsemi Corporation
M2GL010-1FG484I
Microsemi Corporation
A3P030-VQG100I
Microsemi Corporation
AT40K05LV-3DQI
Microchip Technology
EPF10K50SFC256-2
Intel
5SGXEA7K3F40I3
Intel
LFE2M70E-6F900C
Lattice Semiconductor Corporation
10AX090N4F45E3SG
Intel