Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Zener - Single / GDZ9V1B-HG3-18
Herstellerteilenummer | GDZ9V1B-HG3-18 |
---|---|
Zukünftige Teilenummer | FT-GDZ9V1B-HG3-18 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101 |
GDZ9V1B-HG3-18 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Spannung - Zener (Nom) (Vz) | 9.1V |
Toleranz | ±2% |
Leistung max | 200mW |
Impedanz (max.) (Zzt) | 30 Ohms |
Strom - Rückwärtsleckage @ Vr | 500nA @ 6V |
Spannung - Vorwärts (Vf) (Max) @ If | - |
Betriebstemperatur | -55°C ~ 150°C |
Befestigungsart | Surface Mount |
Paket / fall | SC-76, SOD-323 |
Supplier Device Package | SOD-323 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
GDZ9V1B-HG3-18 Gewicht | kontaktiere uns |
Ersatzteilnummer | GDZ9V1B-HG3-18-FT |
GDZ3V0B-G3-18
Vishay Semiconductor Diodes Division
GDZ3V0B-HE3-08
Vishay Semiconductor Diodes Division
GDZ3V0B-HE3-18
Vishay Semiconductor Diodes Division
GDZ3V0B-HG3-08
Vishay Semiconductor Diodes Division
GDZ3V0B-HG3-18
Vishay Semiconductor Diodes Division
GDZ3V3B-E3-08
Vishay Semiconductor Diodes Division
GDZ3V3B-E3-18
Vishay Semiconductor Diodes Division
GDZ3V3B-G3-08
Vishay Semiconductor Diodes Division
GDZ3V3B-G3-18
Vishay Semiconductor Diodes Division
GDZ3V3B-HE3-08
Vishay Semiconductor Diodes Division
XC6SLX75-N3FG676C
Xilinx Inc.
XC2S150-6PQG208C
Xilinx Inc.
M1A3P400-1FGG256I
Microsemi Corporation
A3PE600-2PQG208I
Microsemi Corporation
A1415A-1VQ100C
Microsemi Corporation
5SGXEBBR2H43C2LN
Intel
EP3SE80F1152C4
Intel
M1AFS1500-2FGG676I
Microsemi Corporation
AGL600V5-CS281I
Microsemi Corporation
LFE2-50E-7F484C
Lattice Semiconductor Corporation