Zuhause / Produkte / Widerstände / Durchgangswiderstände / H411R3BDA
Herstellerteilenummer | H411R3BDA |
---|---|
Zukünftige Teilenummer | FT-H411R3BDA |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Holco, Holsworthy |
H411R3BDA Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Widerstand | 11.3 Ohms |
Toleranz | ±0.1% |
Leistung (Watt) | 0.5W, 1/2W |
Zusammensetzung | Metal Film |
Eigenschaften | Pulse Withstanding |
Temperaturkoeffizient | ±25ppm/°C |
Betriebstemperatur | -55°C ~ 155°C |
Paket / fall | Axial |
Supplier Device Package | Axial |
Größe / Abmessung | 0.146" Dia x 0.394" L (3.70mm x 10.00mm) |
Höhe - sitzend (max.) | - |
Anzahl der Abbrüche | 2 |
Fehlerrate | - |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
H411R3BDA Gewicht | kontaktiere uns |
Ersatzteilnummer | H411R3BDA-FT |
H8866RDZA
TE Connectivity Passive Product
H886K6DYA
TE Connectivity Passive Product
H886K6DZA
TE Connectivity Passive Product
H886R6BZA
TE Connectivity Passive Product
H888R7BYA
TE Connectivity Passive Product
H888R7BZA
TE Connectivity Passive Product
H8909RDZA
TE Connectivity Passive Product
H890K9DCA
TE Connectivity Passive Product
H890K9DYA
TE Connectivity Passive Product
H890K9DZA
TE Connectivity Passive Product
XC6SLX75-2CSG484I
Xilinx Inc.
XA3S1500-4FGG456I
Xilinx Inc.
XC3S1400A-4FG484I
Xilinx Inc.
M2GL010TS-VFG256
Microsemi Corporation
LCMXO640C-5FTN256C
Lattice Semiconductor Corporation
LCMXO3L-4300C-5BG324I
Lattice Semiconductor Corporation
EP4SE360H29C4
Intel
XC2VP20-6FFG896I
Xilinx Inc.
M1AGL1000V2-CS281I
Microsemi Corporation
EP1C20F400C6
Intel