Zuhause / Produkte / Widerstände / Durchgangswiderstände / H413R7BZA
Herstellerteilenummer | H413R7BZA |
---|---|
Zukünftige Teilenummer | FT-H413R7BZA |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Holco, Holsworthy |
H413R7BZA Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Widerstand | 13.7 Ohms |
Toleranz | ±0.1% |
Leistung (Watt) | 0.5W, 1/2W |
Zusammensetzung | Metal Film |
Eigenschaften | Pulse Withstanding |
Temperaturkoeffizient | ±100ppm/°C |
Betriebstemperatur | -55°C ~ 155°C |
Paket / fall | Axial |
Supplier Device Package | Axial |
Größe / Abmessung | 0.146" Dia x 0.394" L (3.70mm x 10.00mm) |
Höhe - sitzend (max.) | - |
Anzahl der Abbrüche | 2 |
Fehlerrate | - |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
H413R7BZA Gewicht | kontaktiere uns |
Ersatzteilnummer | H413R7BZA-FT |
H411RBCA
TE Connectivity Passive Product
H411RBDA
TE Connectivity Passive Product
H411RBYA
TE Connectivity Passive Product
H411RBZA
TE Connectivity Passive Product
H411RDYA
TE Connectivity Passive Product
H4120KDZA
TE Connectivity Passive Product
H4121KBDA
TE Connectivity Passive Product
H4121RBCA
TE Connectivity Passive Product
H4121RBDA
TE Connectivity Passive Product
H4121RBYA
TE Connectivity Passive Product
XCV1000E-7FG900I
Xilinx Inc.
A1020B-PLG68C
Microsemi Corporation
EP3CLS150F484I7N
Intel
XC5VSX50T-1FFG1136I
Xilinx Inc.
LFE3-150EA-6FN1156C
Lattice Semiconductor Corporation
LFE2-12E-5F484C
Lattice Semiconductor Corporation
EP4CGX110DF31I7
Intel
EP3C40F780C8N
Intel
EP2S130F780C4N
Intel
EP20K60EQC208-3N
Intel