Zuhause / Produkte / Widerstände / Durchgangswiderstände / H417R4BZA
Herstellerteilenummer | H417R4BZA |
---|---|
Zukünftige Teilenummer | FT-H417R4BZA |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Holco, Holsworthy |
H417R4BZA Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Widerstand | 17.4 Ohms |
Toleranz | ±0.1% |
Leistung (Watt) | 0.5W, 1/2W |
Zusammensetzung | Metal Film |
Eigenschaften | Pulse Withstanding |
Temperaturkoeffizient | ±100ppm/°C |
Betriebstemperatur | -55°C ~ 155°C |
Paket / fall | Axial |
Supplier Device Package | Axial |
Größe / Abmessung | 0.146" Dia x 0.394" L (3.70mm x 10.00mm) |
Höhe - sitzend (max.) | - |
Anzahl der Abbrüche | 2 |
Fehlerrate | - |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
H417R4BZA Gewicht | kontaktiere uns |
Ersatzteilnummer | H417R4BZA-FT |
H415R4BYA
TE Connectivity Passive Product
H415R4BZA
TE Connectivity Passive Product
H415R4DYA
TE Connectivity Passive Product
H415R8BCA
TE Connectivity Passive Product
H415R8BDA
TE Connectivity Passive Product
H415R8BYA
TE Connectivity Passive Product
H415R8BZA
TE Connectivity Passive Product
H415RBCA
TE Connectivity Passive Product
H415RBDA
TE Connectivity Passive Product
H415RBYA
TE Connectivity Passive Product
LCMXO2-640HC-6SG48I
Lattice Semiconductor Corporation
LCMXO640C-3TN100C
Lattice Semiconductor Corporation
XCV1600E-8FG900C
Xilinx Inc.
M1AFS600-FG484
Microsemi Corporation
A3PN030-Z2QNG48
Microsemi Corporation
AT40K05-2DQI
Microchip Technology
10M08SCU169I7G
Intel
10AX048K2F35I2SG
Intel
5SGXMA4H3F35I3LN
Intel
10AX115U2F45E2SG
Intel