Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays / HN1B01F-GR(TE85L,F
Herstellerteilenummer | HN1B01F-GR(TE85L,F |
---|---|
Zukünftige Teilenummer | FT-HN1B01F-GR(TE85L,F |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
HN1B01F-GR(TE85L,F Status (Lebenszyklus) | Auf Lager |
Teilestatus | Discontinued at Future Semiconductor |
Transistortyp | NPN, PNP |
Stromabnehmer (Ic) (max.) | 150mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 10mA, 100mA |
Strom - Kollektorabschaltung (max.) | 100nA (ICBO) |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 200 @ 2mA, 6V |
Leistung max | 300mW |
Frequenz - Übergang | 120MHz |
Betriebstemperatur | 125°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | SC-74, SOT-457 |
Supplier Device Package | SM6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
HN1B01F-GR(TE85L,F Gewicht | kontaktiere uns |
Ersatzteilnummer | HN1B01F-GR(TE85L,F-FT |
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