Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - RF / HSMS-286L-TR2G
Herstellerteilenummer | HSMS-286L-TR2G |
---|---|
Zukünftige Teilenummer | FT-HSMS-286L-TR2G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
HSMS-286L-TR2G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
Diodentyp | Schottky - 3 Independent |
Spannung - Peak Reverse (Max) | 4V |
Strom - max | - |
Kapazität @ Vr, F | 0.25pF @ 0V, 1MHz |
Widerstand @ If, F | - |
Verlustleistung (max.) | - |
Betriebstemperatur | 150°C (TJ) |
Paket / fall | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SOT-363 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
HSMS-286L-TR2G Gewicht | kontaktiere uns |
Ersatzteilnummer | HSMS-286L-TR2G-FT |
DMV1500SDFD
STMicroelectronics
DMV1500MFD
STMicroelectronics
DMV1500HFD
STMicroelectronics
DMV1500HDFD
STMicroelectronics
DMV1500HDFD6
STMicroelectronics
DMV1500L
STMicroelectronics
DMV1500LF5
STMicroelectronics
DMV1500LFD
STMicroelectronics
HSMP-3816-BLKG
Broadcom Limited
HSMP-3816-TR1G
Broadcom Limited
A3P030-1QNG68
Microsemi Corporation
XC2V250-5FGG256I
Xilinx Inc.
XC6SLX75T-3FG676I
Xilinx Inc.
XC3S1600E-5FG484C
Xilinx Inc.
XC7A75T-3FGG484E
Xilinx Inc.
M1AFS1500-FGG484I
Microsemi Corporation
5SGXEA7N3F40C2
Intel
XC7A200T-2FB676I
Xilinx Inc.
XC7K325T-L2FFG676E
Xilinx Inc.
EP4SGX110FF35C4N
Intel