Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / HUF75309T3ST
Herstellerteilenummer | HUF75309T3ST |
---|---|
Zukünftige Teilenummer | FT-HUF75309T3ST |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
HUF75309T3ST Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 55V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 3A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 70 mOhm @ 3A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 23nC @ 20V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 352pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 1.1W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SOT-223-4 |
Paket / fall | TO-261-4, TO-261AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
HUF75309T3ST Gewicht | kontaktiere uns |
Ersatzteilnummer | HUF75309T3ST-FT |
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