Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IPA50R650CE
Herstellerteilenummer | IPA50R650CE |
---|---|
Zukünftige Teilenummer | FT-IPA50R650CE |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | CoolMOS™ |
IPA50R650CE Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 500V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 6.1A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 13V |
Rds On (Max) @ Id, Vgs | 650 mOhm @ 1.8A, 13V |
Vgs (th) (Max) @ Id | 3.5V @ 150µA |
Gateladung (Qg) (Max) @ Vgs | 15nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 342pF @ 100V |
FET-Funktion | Super Junction |
Verlustleistung (max.) | 27.2W (Tc) |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | PG-TO220-FP |
Paket / fall | TO-220-3 Full Pack |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPA50R650CE Gewicht | kontaktiere uns |
Ersatzteilnummer | IPA50R650CE-FT |
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