Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IPB097N08N3 G
Herstellerteilenummer | IPB097N08N3 G |
---|---|
Zukünftige Teilenummer | FT-IPB097N08N3 G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
IPB097N08N3 G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 80V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 70A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 9.7 mOhm @ 46A, 10V |
Vgs (th) (Max) @ Id | 3.5V @ 46µA |
Gateladung (Qg) (Max) @ Vgs | 35nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2410pF @ 40V |
FET-Funktion | - |
Verlustleistung (max.) | 100W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPB097N08N3 G Gewicht | kontaktiere uns |
Ersatzteilnummer | IPB097N08N3 G-FT |
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