Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IPC302N20N3X1SA1
Herstellerteilenummer | IPC302N20N3X1SA1 |
---|---|
Zukünftige Teilenummer | FT-IPC302N20N3X1SA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
IPC302N20N3X1SA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 200V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 1A (Tj) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 2A, 10V |
Vgs (th) (Max) @ Id | 4V @ 260µA |
Gateladung (Qg) (Max) @ Vgs | - |
Vgs (Max) | - |
Eingangskapazität (Ciss) (Max) @ Vds | - |
FET-Funktion | - |
Verlustleistung (max.) | - |
Betriebstemperatur | - |
Befestigungsart | Surface Mount |
Supplier Device Package | Sawn on foil |
Paket / fall | Die |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPC302N20N3X1SA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | IPC302N20N3X1SA1-FT |
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