Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / IPG20N06S2L65AATMA1
Herstellerteilenummer | IPG20N06S2L65AATMA1 |
---|---|
Zukünftige Teilenummer | FT-IPG20N06S2L65AATMA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101, OptiMOS™ |
IPG20N06S2L65AATMA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 2 N-Channel (Dual) |
FET-Funktion | Logic Level Gate |
Drain-Source-Spannung (Vdss) | 55V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 20A |
Rds On (Max) @ Id, Vgs | 65 mOhm @ 15A, 10V |
Vgs (th) (Max) @ Id | 2V @ 14µA |
Gateladung (Qg) (Max) @ Vgs | 12nC @ 10V |
Eingangskapazität (Ciss) (Max) @ Vds | 410pF @ 25V |
Leistung max | 43W |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | 8-PowerVDFN |
Supplier Device Package | PG-TDSON-8-10 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPG20N06S2L65AATMA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | IPG20N06S2L65AATMA1-FT |
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