Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / IPG20N06S415ATMA1
Herstellerteilenummer | IPG20N06S415ATMA1 |
---|---|
Zukünftige Teilenummer | FT-IPG20N06S415ATMA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101, OptiMOS™ |
IPG20N06S415ATMA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Discontinued at Future Semiconductor |
FET-Typ | 2 N-Channel (Dual) |
FET-Funktion | Standard |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 20A |
Rds On (Max) @ Id, Vgs | 15.5 mOhm @ 17A, 10V |
Vgs (th) (Max) @ Id | 4V @ 20µA |
Gateladung (Qg) (Max) @ Vgs | 29nC @ 10V |
Eingangskapazität (Ciss) (Max) @ Vds | 2260pF @ 25V |
Leistung max | 50W |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | 8-PowerVDFN |
Supplier Device Package | PG-TDSON-8-4 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPG20N06S415ATMA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | IPG20N06S415ATMA1-FT |
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