Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IPI028N08N3GHKSA1
Herstellerteilenummer | IPI028N08N3GHKSA1 |
---|---|
Zukünftige Teilenummer | FT-IPI028N08N3GHKSA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
IPI028N08N3GHKSA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 80V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 100A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 2.8 mOhm @ 100A, 10V |
Vgs (th) (Max) @ Id | 3.5V @ 270µA |
Gateladung (Qg) (Max) @ Vgs | 206nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 14200pF @ 40V |
FET-Funktion | - |
Verlustleistung (max.) | 300W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | PG-TO262-3 |
Paket / fall | TO-262-3 Long Leads, I²Pak, TO-262AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPI028N08N3GHKSA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | IPI028N08N3GHKSA1-FT |
IPW50R190CEFKSA1
Infineon Technologies
IPW50R199CPFKSA1
Infineon Technologies
IPW50R250CPFKSA1
Infineon Technologies
IPW50R280CEFKSA1
Infineon Technologies
IPW50R299CPFKSA1
Infineon Technologies
IPW50R350CPFKSA1
Infineon Technologies
IPW50R399CPFKSA1
Infineon Technologies
IPW60R041C6FKSA1
Infineon Technologies
IPW60R045CPFKSA1
Infineon Technologies
IPW60R060P7XKSA1
Infineon Technologies
XCVU095-2FFVD1517I
Xilinx Inc.
AGL1000V2-FG256T
Microsemi Corporation
A42MX24-2PQ208I
Microsemi Corporation
ICE5LP4K-SWG36ITR
Lattice Semiconductor Corporation
A42MX09-1VQ100
Microsemi Corporation
10CL016YU256I7G
Intel
EP3C10F256I7
Intel
LCMXO2-7000HE-6FTG256C
Lattice Semiconductor Corporation
10AX066K1F35E1SG
Intel
EP2AGX65CU17C4
Intel