Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IPI037N06L3GHKSA1
Herstellerteilenummer | IPI037N06L3GHKSA1 |
---|---|
Zukünftige Teilenummer | FT-IPI037N06L3GHKSA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
IPI037N06L3GHKSA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 90A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.7 mOhm @ 90A, 10V |
Vgs (th) (Max) @ Id | 2.2V @ 93µA |
Gateladung (Qg) (Max) @ Vgs | 79nC @ 4.5V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 13000pF @ 30V |
FET-Funktion | - |
Verlustleistung (max.) | 167W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | PG-TO262-3 |
Paket / fall | TO-262-3 Long Leads, I²Pak, TO-262AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPI037N06L3GHKSA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | IPI037N06L3GHKSA1-FT |
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