Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IPI041N12N3GAKSA1
Herstellerteilenummer | IPI041N12N3GAKSA1 |
---|---|
Zukünftige Teilenummer | FT-IPI041N12N3GAKSA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
IPI041N12N3GAKSA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 120V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 120A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 4.1 mOhm @ 100A, 10V |
Vgs (th) (Max) @ Id | 4V @ 270µA |
Gateladung (Qg) (Max) @ Vgs | 211nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 13800pF @ 60V |
FET-Funktion | - |
Verlustleistung (max.) | 300W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | PG-TO262-3 |
Paket / fall | TO-262-3 Long Leads, I²Pak, TO-262AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPI041N12N3GAKSA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | IPI041N12N3GAKSA1-FT |
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