Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IPL65R1K5C6SATMA1
Herstellerteilenummer | IPL65R1K5C6SATMA1 |
---|---|
Zukünftige Teilenummer | FT-IPL65R1K5C6SATMA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | CoolMOS™ C6 |
IPL65R1K5C6SATMA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 650V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 3A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 1A, 10V |
Vgs (th) (Max) @ Id | 3.5V @ 100µA |
Gateladung (Qg) (Max) @ Vgs | 11nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 225pF @ 100V |
FET-Funktion | - |
Verlustleistung (max.) | 26.6W (Tc) |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | Thin-PAK (5x6) |
Paket / fall | 8-PowerTDFN |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPL65R1K5C6SATMA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | IPL65R1K5C6SATMA1-FT |
IPC60R160C6UNSAWNX6SA1
Infineon Technologies
IPC60R160C6X1SA1
Infineon Technologies
IPC60R165CPX1SA4
Infineon Technologies
IPC60R190E6UNSAWNX6SA1
Infineon Technologies
IPC60R190E6X1SA1
Infineon Technologies
IPC60R190E6X7SA1
Infineon Technologies
IPC60R190P6X7SA1
Infineon Technologies
IPC60R199CPX1SA1
Infineon Technologies
IPC60R280E6UNSAWNX6SA1
Infineon Technologies
IPC60R280E6X1SA1
Infineon Technologies
XCS20XL-4VQ100C
Xilinx Inc.
XC6SLX150-3FG484I
Xilinx Inc.
A42MX36-1PQG240
Microsemi Corporation
A3P1000-2FGG484I
Microsemi Corporation
XC4020E-4HQ208I
Xilinx Inc.
XC7VX690T-1FFG1930C
Xilinx Inc.
A42MX09-TQ176
Microsemi Corporation
M1A3P1000L-FGG144
Microsemi Corporation
ICE40UL1K-CM36AITR1K
Lattice Semiconductor Corporation
EP4SGX230HF35C2
Intel