Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IPP027N08N5AKSA1
Herstellerteilenummer | IPP027N08N5AKSA1 |
---|---|
Zukünftige Teilenummer | FT-IPP027N08N5AKSA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
IPP027N08N5AKSA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 80V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 120A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 2.7 mOhm @ 100A, 10V |
Vgs (th) (Max) @ Id | 3.8V @ 154µA |
Gateladung (Qg) (Max) @ Vgs | 123nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 8970pF @ 40V |
FET-Funktion | - |
Verlustleistung (max.) | 214W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | PG-TO220-3 |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPP027N08N5AKSA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | IPP027N08N5AKSA1-FT |
IPP50N10S3L16AKSA1
Infineon Technologies
IPP020N06NAKSA1
Infineon Technologies
IPP80N06S209AKSA2
Infineon Technologies
IPP80R1K4P7XKSA1
Infineon Technologies
IPP200N15N3GXKSA1
Infineon Technologies
IPP042N03LGXKSA1
Infineon Technologies
IPP023N10N5AKSA1
Infineon Technologies
IPP083N10N5AKSA1
Infineon Technologies
IPP60R199CPXKSA1
Infineon Technologies
IPP037N08N3GXKSA1
Infineon Technologies
XC2VP4-6FGG256C
Xilinx Inc.
XC4052XL-3HQ304C
Xilinx Inc.
XC2V250-6FGG456C
Xilinx Inc.
M1A3P600-1FGG484
Microsemi Corporation
A42MX36-PQ208I
Microsemi Corporation
M2GL090TS-1FGG676I
Microsemi Corporation
LFEC10E-4QN208I
Lattice Semiconductor Corporation
EP1K100QC208-3N
Intel
EP4SGX180FF35C2XN
Intel
EP1SGX25DF1020C6
Intel