Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IPP65R310CFDAAKSA1
Herstellerteilenummer | IPP65R310CFDAAKSA1 |
---|---|
Zukünftige Teilenummer | FT-IPP65R310CFDAAKSA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101, CoolMOS™ |
IPP65R310CFDAAKSA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Not For New Designs |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 650V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 11.4A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 310 mOhm @ 4.4A, 10V |
Vgs (th) (Max) @ Id | 4.5V @ 440µA |
Gateladung (Qg) (Max) @ Vgs | 41nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1110pF @ 100V |
FET-Funktion | - |
Verlustleistung (max.) | 104.2W (Tc) |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | PG-TO220-3 |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPP65R310CFDAAKSA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | IPP65R310CFDAAKSA1-FT |
IPP120P04P4L03AKSA1
Infineon Technologies
IPP12CN10N G
Infineon Technologies
IPP12CN10NGXKSA1
Infineon Technologies
IPP12CNE8N G
Infineon Technologies
IPP139N08N3 G
Infineon Technologies
IPP13N03LB G
Infineon Technologies
IPP147N03L G
Infineon Technologies
IPP14N03LA
Infineon Technologies
IPP16CN10LGXKSA1
Infineon Technologies
IPP16CN10NGHKSA1
Infineon Technologies
EP20K100ETC144-1N
Intel
LFXP3C-3T100I
Lattice Semiconductor Corporation
XC2S100-5PQ208I
Xilinx Inc.
A3PE600-PQG208
Microsemi Corporation
10AX027E4F29I3SG
Intel
5SEE9H40C2LN
Intel
A40MX04-PL84I
Microsemi Corporation
ICE40UL1K-CM36AITR
Lattice Semiconductor Corporation
LFXP15C-3FN256I
Lattice Semiconductor Corporation
LFE3-95EA-6LFN672C
Lattice Semiconductor Corporation