Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IPW80R280P7XKSA1
Herstellerteilenummer | IPW80R280P7XKSA1 |
---|---|
Zukünftige Teilenummer | FT-IPW80R280P7XKSA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | CoolMOS™ |
IPW80R280P7XKSA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 800V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 17A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 280 mOhm @ 7.2A, 10V |
Vgs (th) (Max) @ Id | 3.5V @ 360µA |
Gateladung (Qg) (Max) @ Vgs | 10nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1200pF @ 500V |
FET-Funktion | Super Junction |
Verlustleistung (max.) | 101W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | PG-TO247-3-41 |
Paket / fall | TO-247-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPW80R280P7XKSA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | IPW80R280P7XKSA1-FT |
IPD80R2K0P7ATMA1
Infineon Technologies
IPD80R600P7ATMA1
Infineon Technologies
IPD80R900P7ATMA1
Infineon Technologies
IPD95R1K2P7ATMA1
Infineon Technologies
IPD60R180P7ATMA1
Infineon Technologies
IPD60R180P7SAUMA1
Infineon Technologies
IPD60R280P7ATMA1
Infineon Technologies
IPD60R280P7SAUMA1
Infineon Technologies
IPD60R360P7ATMA1
Infineon Technologies
IPD60R360P7SAUMA1
Infineon Technologies
XC6SLX45-3FG676C
Xilinx Inc.
XC4005L-5PQ208C
Xilinx Inc.
XC2VP2-7FG456C
Xilinx Inc.
A42MX16-2PQ208I
Microsemi Corporation
A42MX16-PQ208M
Microsemi Corporation
LCMXO3LF-9400C-5BG484C
Lattice Semiconductor Corporation
LFE5UM5G-45F-8BG381C
Lattice Semiconductor Corporation
5SGSED6K3F40C2N
Intel
LFEC1E-4Q208C
Lattice Semiconductor Corporation
EP3C40F780C6N
Intel