Herstellerteilenummer | IRF3315 |
---|---|
Zukünftige Teilenummer | FT-IRF3315 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | HEXFET® |
IRF3315 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 150V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 27A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 70 mOhm @ 12A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 95nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1300pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 136W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220AB |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRF3315 Gewicht | kontaktiere uns |
Ersatzteilnummer | IRF3315-FT |
IRL3713PBF
Infineon Technologies
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AUIRF9Z34N
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A54SX32A-TQG176M
Microsemi Corporation
M1AFS250-FG256
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5SGSMD6K1F40C2LN
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EP4SE360H29I3
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Lattice Semiconductor Corporation
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Intel