Herstellerteilenummer | IRF5802 |
---|---|
Zukünftige Teilenummer | FT-IRF5802 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | HEXFET® |
IRF5802 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 150V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 900mA (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 540mA, 10V |
Vgs (th) (Max) @ Id | 5.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 6.8nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 88pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 2W (Ta) |
Betriebstemperatur | - |
Befestigungsart | Surface Mount |
Supplier Device Package | Micro6™(TSOP-6) |
Paket / fall | SOT-23-6 Thin, TSOT-23-6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRF5802 Gewicht | kontaktiere uns |
Ersatzteilnummer | IRF5802-FT |
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