Herstellerteilenummer | IRF6100 |
---|---|
Zukünftige Teilenummer | FT-IRF6100 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | HEXFET® |
IRF6100 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 5.1A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 65 mOhm @ 5.1A, 4.5V |
Vgs (th) (Max) @ Id | 1.2V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 21nC @ 5V |
Vgs (Max) | ±12V |
Eingangskapazität (Ciss) (Max) @ Vds | 1230pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 2.2W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 4-FlipFet™ |
Paket / fall | 4-FlipFet™ |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRF6100 Gewicht | kontaktiere uns |
Ersatzteilnummer | IRF6100-FT |
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