Herstellerteilenummer | IRF620 |
---|---|
Zukünftige Teilenummer | FT-IRF620 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | PowerMESH™ II |
IRF620 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 200V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 6A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 800 mOhm @ 3A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 27nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 350pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 70W (Tc) |
Betriebstemperatur | -65°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220AB |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRF620 Gewicht | kontaktiere uns |
Ersatzteilnummer | IRF620-FT |
STP13NK60Z
STMicroelectronics
STP13NM60ND
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STP6N60M2
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STP46NF30
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STP18N60M2
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XCV200-5FG256I
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M7A3P1000-FGG256I
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A40MX04-1PL68
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EP1M350F780C6
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LCMXO2-2000HE-6FTG256C
Lattice Semiconductor Corporation
LFXP2-40E-6FN484I
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10AX066H1F34I1SG
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EP1C6Q240C7N
Intel
EP1K100QC208-1GZ
Intel