Herstellerteilenummer | IRF6601 |
---|---|
Zukünftige Teilenummer | FT-IRF6601 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | HEXFET® |
IRF6601 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 26A (Ta), 85A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 26A, 10V |
Vgs (th) (Max) @ Id | 2.2V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 45nC @ 4.5V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 3440pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 3.6W (Ta), 42W (Tc) |
Betriebstemperatur | - |
Befestigungsart | Surface Mount |
Supplier Device Package | DIRECTFET™ MT |
Paket / fall | DirectFET™ Isometric MT |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRF6601 Gewicht | kontaktiere uns |
Ersatzteilnummer | IRF6601-FT |
IRF6635TRPBF
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