Herstellerteilenummer | IRF6607 |
---|---|
Zukünftige Teilenummer | FT-IRF6607 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | HEXFET® |
IRF6607 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 27A (Ta), 94A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 7V |
Rds On (Max) @ Id, Vgs | 3.3 mOhm @ 25A, 10V |
Vgs (th) (Max) @ Id | 2V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 75nC @ 4.5V |
Vgs (Max) | ±12V |
Eingangskapazität (Ciss) (Max) @ Vds | 6930pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 3.6W (Ta), 42W (Tc) |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | DIRECTFET™ MT |
Paket / fall | DirectFET™ Isometric MT |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRF6607 Gewicht | kontaktiere uns |
Ersatzteilnummer | IRF6607-FT |
IRF6678TRPBF
Infineon Technologies
IRF6714MTR1PBF
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IRF6714MTRPBF
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IRF6715MTR1PBF
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IRF6724MTR1PBF
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IRF6725MTR1PBF
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XC7A15T-2FTG256C
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XCKU035-L1FFVA1156I
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EP3C5E144C7
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A3P1000-1FGG144I
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AGL600V2-FG144I
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EP2AGX125EF29C6N
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EP20K100EBI356-2X
Intel