Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IRF6794MTR1PBF
Herstellerteilenummer | IRF6794MTR1PBF |
---|---|
Zukünftige Teilenummer | FT-IRF6794MTR1PBF |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | HEXFET® |
IRF6794MTR1PBF Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 25V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 32A (Ta), 200A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 1.7 mOhm @ 32A, 10V |
Vgs (th) (Max) @ Id | 2.35V @ 100µA |
Gateladung (Qg) (Max) @ Vgs | 47nC @ 4.5V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 4420pF @ 13V |
FET-Funktion | Schottky Diode (Body) |
Verlustleistung (max.) | 2.8W (Ta), 100W (Tc) |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | DIRECTFET™ MX |
Paket / fall | DirectFET™ Isometric MX |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRF6794MTR1PBF Gewicht | kontaktiere uns |
Ersatzteilnummer | IRF6794MTR1PBF-FT |
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