Herstellerteilenummer | IRF7106 |
---|---|
Zukünftige Teilenummer | FT-IRF7106 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | HEXFET® |
IRF7106 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N and P-Channel |
FET-Funktion | Standard |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 3A, 2.5A |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 1A, 10V |
Vgs (th) (Max) @ Id | 1V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 25nC @ 10V |
Eingangskapazität (Ciss) (Max) @ Vds | 300pF @ 15V |
Leistung max | 2W |
Betriebstemperatur | - |
Befestigungsart | Surface Mount |
Paket / fall | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRF7106 Gewicht | kontaktiere uns |
Ersatzteilnummer | IRF7106-FT |
BSD840NH6327XTSA1
Infineon Technologies
BSD235NH6327XTSA1
Infineon Technologies
BSD223P
Infineon Technologies
BSD223P L6327
Infineon Technologies
BSD223PH6327XTSA1
Infineon Technologies
BSD235C L6327
Infineon Technologies
BSD235CH6327XTSA1
Infineon Technologies
BSD235N L6327
Infineon Technologies
BSD840N L6327
Infineon Technologies
BSO150N03MDGXUMA1
Infineon Technologies
XA6SLX16-3FTG256I
Xilinx Inc.
LCMXO3L-9400E-6BG484C
Lattice Semiconductor Corporation
A3PN125-2VQG100I
Microsemi Corporation
AGLN060V2-VQ100I
Microsemi Corporation
EP4CE115F23C7
Intel
XC2V1000-4FFG896I
Xilinx Inc.
5AGXMB3G4F31I3N
Intel
EP4SE230F29I3N
Intel
EP3C25F324I7
Intel
EP20K200EQC208-2X
Intel