Herstellerteilenummer | IRF8113 |
---|---|
Zukünftige Teilenummer | FT-IRF8113 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | HEXFET® |
IRF8113 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 17.2A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 5.6 mOhm @ 17.2A, 10V |
Vgs (th) (Max) @ Id | 2.2V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 36nC @ 4.5V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2910pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 2.5W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-SO |
Paket / fall | 8-SOIC (0.154", 3.90mm Width) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRF8113 Gewicht | kontaktiere uns |
Ersatzteilnummer | IRF8113-FT |
IRF7492TR
Infineon Technologies
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