Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IRFD014PBF
Herstellerteilenummer | IRFD014PBF |
---|---|
Zukünftige Teilenummer | FT-IRFD014PBF |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
IRFD014PBF Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 1.7A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 1A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 11nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 310pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 1.3W (Ta) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
Paket / fall | 4-DIP (0.300", 7.62mm) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRFD014PBF Gewicht | kontaktiere uns |
Ersatzteilnummer | IRFD014PBF-FT |
TK3A65D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK3A65DA(STA4,QM)
Toshiba Semiconductor and Storage
TK4A50D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK4A53D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK4A55D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK4A55DA(STA4,Q,M)
Toshiba Semiconductor and Storage
TK4A60D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK4A60DA(STA4,Q,M)
Toshiba Semiconductor and Storage
TK4A60DB(STA4,Q,M)
Toshiba Semiconductor and Storage
TK4A65DA(STA4,Q,M)
Toshiba Semiconductor and Storage
M2GL050-1FG484
Microsemi Corporation
ICE5LP4K-CM36ITR50
Lattice Semiconductor Corporation
AGL250V5-VQG100I
Microsemi Corporation
5SGXMA4H3F35I3LN
Intel
XC5VLX50-2FF324I
Xilinx Inc.
XC7VX690T-2FFG1157I
Xilinx Inc.
XC2VP2-6FF672C
Xilinx Inc.
LFE3-95EA-9FN1156C
Lattice Semiconductor Corporation
EP3SL110F780I4LN
Intel
EP1C20F324C8N
Intel