Herstellerteilenummer | IRFD113 |
---|---|
Zukünftige Teilenummer | FT-IRFD113 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
IRFD113 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 800mA (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 800 mOhm @ 800mA, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 7nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 200pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 1W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | 4-HVMDIP |
Paket / fall | 4-DIP (0.300", 7.62mm) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRFD113 Gewicht | kontaktiere uns |
Ersatzteilnummer | IRFD113-FT |
IPP04CN10NGXKSA1
Infineon Technologies
IPP076N15N5AKSA1
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IPP100N12S305AKSA1
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A3P060-1TQ144I
Microsemi Corporation
M2GL025T-1FCSG325I
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LFE5UM-45F-8BG381C
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5SGXEA4K1F35C2N
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ICE40UL1K-CM36AI
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LFXP6C-5Q208C
Lattice Semiconductor Corporation
5AGXFB3H4F35C5N
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10AX016E3F27I1HG
Intel