Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IRFH5210TR2PBF
Herstellerteilenummer | IRFH5210TR2PBF |
---|---|
Zukünftige Teilenummer | FT-IRFH5210TR2PBF |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | HEXFET® |
IRFH5210TR2PBF Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 10A (Ta), 55A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 14.9 mOhm @ 33A, 10V |
Vgs (th) (Max) @ Id | 4V @ 100µA |
Gateladung (Qg) (Max) @ Vgs | 59nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2570pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 3.6W (Ta), 104W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-PQFN (5x6) |
Paket / fall | 8-PowerVDFN |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRFH5210TR2PBF Gewicht | kontaktiere uns |
Ersatzteilnummer | IRFH5210TR2PBF-FT |
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