Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IRFH5250TR2PBF
Herstellerteilenummer | IRFH5250TR2PBF |
---|---|
Zukünftige Teilenummer | FT-IRFH5250TR2PBF |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | HEXFET® |
IRFH5250TR2PBF Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 25V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 45A (Ta), 100A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 1.15 mOhm @ 50A, 10V |
Vgs (th) (Max) @ Id | 2.35V @ 150µA |
Gateladung (Qg) (Max) @ Vgs | 110nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 7174pF @ 13V |
FET-Funktion | - |
Verlustleistung (max.) | 3.6W (Ta), 160W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-PQFN (5x6) |
Paket / fall | 8-PowerVDFN |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRFH5250TR2PBF Gewicht | kontaktiere uns |
Ersatzteilnummer | IRFH5250TR2PBF-FT |
IPW60R190P6FKSA1
Infineon Technologies
IPW60R230P6FKSA1
Infineon Technologies
IPW60R280P6FKSA1
Infineon Technologies
IPW60R330P6FKSA1
Infineon Technologies
IPW65R019C7FKSA1
Infineon Technologies
IPW65R048CFDAFKSA1
Infineon Technologies
IPW65R125C7XKSA1
Infineon Technologies
IPW65R150CFDAFKSA1
Infineon Technologies
IPW65R190C7XKSA1
Infineon Technologies
IPW65R190CFDAFKSA1
Infineon Technologies
A3PE600-2FGG484I
Microsemi Corporation
M1A3P600-2PQ208
Microsemi Corporation
LFE3-35EA-8LFTN256C
Lattice Semiconductor Corporation
AGLN060V5-ZVQ100
Microsemi Corporation
10M25DAF256C7G
Intel
EP3SE260F1152I3
Intel
LCMXO640C-4M100C
Lattice Semiconductor Corporation
EP3SE110F780C2
Intel
10AX048E2F29I1HG
Intel
EP20K60EQC208-1
Intel