Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IRFI9Z24N
Herstellerteilenummer | IRFI9Z24N |
---|---|
Zukünftige Teilenummer | FT-IRFI9Z24N |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | HEXFET® |
IRFI9Z24N Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 55V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 9.5A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 175 mOhm @ 5.4A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 19nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 350pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 29W (Tc) |
Betriebstemperatur | - |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220AB Full-Pak |
Paket / fall | TO-220-3 Full Pack |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRFI9Z24N Gewicht | kontaktiere uns |
Ersatzteilnummer | IRFI9Z24N-FT |
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