Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IRFL014PBF
Herstellerteilenummer | IRFL014PBF |
---|---|
Zukünftige Teilenummer | FT-IRFL014PBF |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
IRFL014PBF Status (Lebenszyklus) | Auf Lager |
Teilestatus | Discontinued at Future Semiconductor |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 2.7A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 1.6A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 11nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 300pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 2W (Ta), 3.1W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SOT-223 |
Paket / fall | TO-261-4, TO-261AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRFL014PBF Gewicht | kontaktiere uns |
Ersatzteilnummer | IRFL014PBF-FT |
ZXM62P03E6TA
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