Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IRL80HS120
Herstellerteilenummer | IRL80HS120 |
---|---|
Zukünftige Teilenummer | FT-IRL80HS120 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
IRL80HS120 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 80V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 12.5A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 32 mOhm @ 7.5A, 10V |
Vgs (th) (Max) @ Id | 2V @ 10µA |
Gateladung (Qg) (Max) @ Vgs | 7nC @ 4.5V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 540pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 11.5W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 6-PQFN (2x2) |
Paket / fall | 6-VDFN Exposed Pad |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRL80HS120 Gewicht | kontaktiere uns |
Ersatzteilnummer | IRL80HS120-FT |
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