Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IRLS4030-7PPBF
Herstellerteilenummer | IRLS4030-7PPBF |
---|---|
Zukünftige Teilenummer | FT-IRLS4030-7PPBF |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | HEXFET® |
IRLS4030-7PPBF Status (Lebenszyklus) | Auf Lager |
Teilestatus | Discontinued at Future Semiconductor |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 190A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 3.9 mOhm @ 110A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 140nC @ 4.5V |
Vgs (Max) | ±16V |
Eingangskapazität (Ciss) (Max) @ Vds | 11490pF @ 50V |
FET-Funktion | - |
Verlustleistung (max.) | 370W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D2PAK (7-Lead) |
Paket / fall | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRLS4030-7PPBF Gewicht | kontaktiere uns |
Ersatzteilnummer | IRLS4030-7PPBF-FT |
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