Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IXFK140N25T
Herstellerteilenummer | IXFK140N25T |
---|---|
Zukünftige Teilenummer | FT-IXFK140N25T |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | GigaMOS™ |
IXFK140N25T Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 250V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 140A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 17 mOhm @ 60A, 10V |
Vgs (th) (Max) @ Id | 5V @ 4mA |
Gateladung (Qg) (Max) @ Vgs | 255nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 19000pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 960W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-264AA (IXFK) |
Paket / fall | TO-264-3, TO-264AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IXFK140N25T Gewicht | kontaktiere uns |
Ersatzteilnummer | IXFK140N25T-FT |
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