Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IXTH12N100L
Herstellerteilenummer | IXTH12N100L |
---|---|
Zukünftige Teilenummer | FT-IXTH12N100L |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
IXTH12N100L Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 1000V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 12A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 1.3 Ohm @ 500mA, 20V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 155nC @ 20V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 2500pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 400W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-247 (IXTH) |
Paket / fall | TO-247-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IXTH12N100L Gewicht | kontaktiere uns |
Ersatzteilnummer | IXTH12N100L-FT |
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