Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IXTP26P10T
Herstellerteilenummer | IXTP26P10T |
---|---|
Zukünftige Teilenummer | FT-IXTP26P10T |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchP™ |
IXTP26P10T Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 26A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 90 mOhm @ 13A, 10V |
Vgs (th) (Max) @ Id | 4.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 52nC @ 10V |
Vgs (Max) | ±15V |
Eingangskapazität (Ciss) (Max) @ Vds | 3820pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 150W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220AB |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IXTP26P10T Gewicht | kontaktiere uns |
Ersatzteilnummer | IXTP26P10T-FT |
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