Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IXTT30N60L2
Herstellerteilenummer | IXTT30N60L2 |
---|---|
Zukünftige Teilenummer | FT-IXTT30N60L2 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Linear L2™ |
IXTT30N60L2 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 30A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 240 mOhm @ 15A, 10V |
Vgs (th) (Max) @ Id | 4.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 335nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 10700pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 540W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-268 |
Paket / fall | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IXTT30N60L2 Gewicht | kontaktiere uns |
Ersatzteilnummer | IXTT30N60L2-FT |
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