Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / IXTU12N06T
Herstellerteilenummer | IXTU12N06T |
---|---|
Zukünftige Teilenummer | FT-IXTU12N06T |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchMV™ |
IXTU12N06T Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 12A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 85 mOhm @ 6A, 10V |
Vgs (th) (Max) @ Id | 4V @ 25µA |
Gateladung (Qg) (Max) @ Vgs | 3.4nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 256pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 33W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-251 |
Paket / fall | TO-251-3 Short Leads, IPak, TO-251AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
IXTU12N06T Gewicht | kontaktiere uns |
Ersatzteilnummer | IXTU12N06T-FT |
IXFQ10N80P
IXYS
IXFQ14N80P
IXYS
IXFQ24N50P2
IXYS
IXFQ24N60X
IXYS
IXFQ26N50P3
IXYS
IXFQ50N60X
IXYS
IXFQ60N60X
IXYS
IXTQ100N25P
IXYS
IXTQ110N10P
IXYS
IXTQ120N20P
IXYS
XC2VP4-6FGG256C
Xilinx Inc.
XC4052XL-3HQ304C
Xilinx Inc.
XC2V250-6FGG456C
Xilinx Inc.
M1A3P600-1FGG484
Microsemi Corporation
A42MX36-PQ208I
Microsemi Corporation
M2GL090TS-1FGG676I
Microsemi Corporation
LFEC10E-4QN208I
Lattice Semiconductor Corporation
EP1K100QC208-3N
Intel
EP4SGX180FF35C2XN
Intel
EP1SGX25DF1020C6
Intel