Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / JANTXV2N6800
Herstellerteilenummer | JANTXV2N6800 |
---|---|
Zukünftige Teilenummer | FT-JANTXV2N6800 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Military, MIL-PRF-19500/557 |
JANTXV2N6800 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 400V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 3A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.1 Ohm @ 3A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 34.75nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | - |
FET-Funktion | - |
Verlustleistung (max.) | 800mW (Ta), 25W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-205AF (TO-39) |
Paket / fall | TO-205AF Metal Can |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
JANTXV2N6800 Gewicht | kontaktiere uns |
Ersatzteilnummer | JANTXV2N6800-FT |
JAN2N6788
Microsemi Corporation
JAN2N6788U
Microsemi Corporation
JAN2N6790
Microsemi Corporation
JAN2N6790U
Microsemi Corporation
JAN2N6796
Microsemi Corporation
JAN2N6796U
Microsemi Corporation
JAN2N6798
Microsemi Corporation
JAN2N6798U
Microsemi Corporation
JAN2N6800
Microsemi Corporation
JAN2N6800U
Microsemi Corporation
XCS20XL-4VQ100C
Xilinx Inc.
XC6SLX150-3FG484I
Xilinx Inc.
A42MX36-1PQG240
Microsemi Corporation
A3P1000-2FGG484I
Microsemi Corporation
XC4020E-4HQ208I
Xilinx Inc.
XC7VX690T-1FFG1930C
Xilinx Inc.
A42MX09-TQ176
Microsemi Corporation
M1A3P1000L-FGG144
Microsemi Corporation
ICE40UL1K-CM36AITR1K
Lattice Semiconductor Corporation
EP4SGX230HF35C2
Intel