Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / JANTXV2N6800
Herstellerteilenummer | JANTXV2N6800 |
---|---|
Zukünftige Teilenummer | FT-JANTXV2N6800 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Military, MIL-PRF-19500/557 |
JANTXV2N6800 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 400V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 3A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.1 Ohm @ 3A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 34.75nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | - |
FET-Funktion | - |
Verlustleistung (max.) | 800mW (Ta), 25W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-205AF (TO-39) |
Paket / fall | TO-205AF Metal Can |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
JANTXV2N6800 Gewicht | kontaktiere uns |
Ersatzteilnummer | JANTXV2N6800-FT |
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