Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / LSIC1MO120E0080
Herstellerteilenummer | LSIC1MO120E0080 |
---|---|
Zukünftige Teilenummer | FT-LSIC1MO120E0080 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
LSIC1MO120E0080 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | SiCFET (Silicon Carbide) |
Drain-Source-Spannung (Vdss) | 1200V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 39A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 20A, 20V |
Vgs (th) (Max) @ Id | 4V @ 10mA |
Gateladung (Qg) (Max) @ Vgs | 95nC @ 20V |
Vgs (Max) | +22V, -6V |
Eingangskapazität (Ciss) (Max) @ Vds | 1825pF @ 800V |
FET-Funktion | - |
Verlustleistung (max.) | 179W (Tc) |
Betriebstemperatur | -55°C ~ 150°C |
Befestigungsart | Through Hole |
Supplier Device Package | TO-247-3 |
Paket / fall | TO-247-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
LSIC1MO120E0080 Gewicht | kontaktiere uns |
Ersatzteilnummer | LSIC1MO120E0080-FT |
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