Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - RF / MA2C85900E
Herstellerteilenummer | MA2C85900E |
---|---|
Zukünftige Teilenummer | FT-MA2C85900E |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
MA2C85900E Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
Diodentyp | Standard - Single |
Spannung - Peak Reverse (Max) | 35V |
Strom - max | 100mA |
Kapazität @ Vr, F | 1.2pF @ 6V, 1MHz |
Widerstand @ If, F | 980 mOhm @ 2mA, 100MHz |
Verlustleistung (max.) | - |
Betriebstemperatur | -25°C ~ 85°C (TA) |
Paket / fall | DO-204AG, DO-34, Axial |
Supplier Device Package | DO34-A1 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
MA2C85900E Gewicht | kontaktiere uns |
Ersatzteilnummer | MA2C85900E-FT |
HSMS-282B-TR1G
Broadcom Limited
HSMS-282B-TR2G
Broadcom Limited
HSMS-282C-BLKG
Broadcom Limited
HSMS-282C-TR1G
Broadcom Limited
HSMS-282C-TR2G
Broadcom Limited
HSMS-282E-BLKG
Broadcom Limited
HSMS-282E-TR1G
Broadcom Limited
HSMS-282E-TR2G
Broadcom Limited
HSMS-282F-BLKG
Broadcom Limited
HSMS-282F-TR1G
Broadcom Limited
A3P030-1QNG68
Microsemi Corporation
XC2V250-5FGG256I
Xilinx Inc.
XC6SLX75T-3FG676I
Xilinx Inc.
XC3S1600E-5FG484C
Xilinx Inc.
XC7A75T-3FGG484E
Xilinx Inc.
M1AFS1500-FGG484I
Microsemi Corporation
5SGXEA7N3F40C2
Intel
XC7A200T-2FB676I
Xilinx Inc.
XC7K325T-L2FFG676E
Xilinx Inc.
EP4SGX110FF35C4N
Intel