Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - RF / MA4AGBLP912
Herstellerteilenummer | MA4AGBLP912 |
---|---|
Zukünftige Teilenummer | FT-MA4AGBLP912 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
MA4AGBLP912 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Diodentyp | PIN - Single |
Spannung - Peak Reverse (Max) | 50V |
Strom - max | 40mA |
Kapazität @ Vr, F | 0.03pF @ 5V, 1MHz |
Widerstand @ If, F | 4.9 Ohm @ 20mA, 1GHz |
Verlustleistung (max.) | - |
Betriebstemperatur | -65°C ~ 125°C (TJ) |
Paket / fall | - |
Supplier Device Package | - |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
MA4AGBLP912 Gewicht | kontaktiere uns |
Ersatzteilnummer | MA4AGBLP912-FT |
MMVL3700T1
ON Semiconductor
MMVL3700T1G
ON Semiconductor
MBD330DWT1G
ON Semiconductor
MBD770DWT1G
ON Semiconductor
MBD110DWT1G
ON Semiconductor
MMBD770T1G
ON Semiconductor
MMBD352WT1G
ON Semiconductor
MMBD330T1G
ON Semiconductor
NSVP249SDSF3T1G
ON Semiconductor
MMBD770T1
ON Semiconductor
XC3S50AN-4FTG256C
Xilinx Inc.
XC6SLX45-3FG676I
Xilinx Inc.
M1A3PE1500-FG484I
Microsemi Corporation
A54SX08A-PQG208A
Microsemi Corporation
EP4CGX150DF27C8
Intel
5SGXEB9R1H43C2LN
Intel
XC7A100T-2CSG324I
Xilinx Inc.
LFXP2-17E-5FT256I
Lattice Semiconductor Corporation
EP1C4F400C7
Intel
EPF10K100ARC240-1
Intel