Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Gleichrichter - Arrays / MBRB10H100CTHE3/45
Herstellerteilenummer | MBRB10H100CTHE3/45 |
---|---|
Zukünftige Teilenummer | FT-MBRB10H100CTHE3/45 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
MBRB10H100CTHE3/45 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Discontinued at Future Semiconductor |
Diodenkonfiguration | 1 Pair Common Cathode |
Diodentyp | Schottky |
Spannung - DC-Rückwärtsgang (Vr) (max.) | 100V |
Strom - Durchschnitt gleichgerichtet (Io) (pro Diode) | 5A |
Spannung - Vorwärts (Vf) (Max) @ If | 760mV @ 5A |
Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Strom - Rückwärtsleckage @ Vr | 3.5µA @ 100V |
Betriebstemperatur - Übergang | -65°C ~ 150°C |
Befestigungsart | Surface Mount |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
MBRB10H100CTHE3/45 Gewicht | kontaktiere uns |
Ersatzteilnummer | MBRB10H100CTHE3/45-FT |
BYQ28EB-100-E3/81
Vishay Semiconductor Diodes Division
BYQ28EB-100HE3/45
Vishay Semiconductor Diodes Division
BYQ28EB-100HE3/81
Vishay Semiconductor Diodes Division
BYQ28EB-150-E3/81
Vishay Semiconductor Diodes Division
BYQ28EB-150HE3/45
Vishay Semiconductor Diodes Division
BYQ28EB-150HE3/81
Vishay Semiconductor Diodes Division
BYQ28EB-200-E3/81
Vishay Semiconductor Diodes Division
BYQ28EB-200HE3/45
Vishay Semiconductor Diodes Division
BYQ28EB-200HE3/81
Vishay Semiconductor Diodes Division
BYT28B-300-E3/81
Vishay Semiconductor Diodes Division
LFE2-6E-5TN144C
Lattice Semiconductor Corporation
XC2S200-5FG256C
Xilinx Inc.
EP4CE15F23C7
Intel
5SGXMA7N3F40I4N
Intel
5SGXEABK2H40C2L
Intel
XC4VFX20-10FFG672I
Xilinx Inc.
LCMXO3L-2100C-6BG256C
Lattice Semiconductor Corporation
ICE40LP384-CM81TR
Lattice Semiconductor Corporation
EP3CLS70F780C8
Intel
10AX048E2F29I1SG
Intel