Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / MCH3376-TL-E
Herstellerteilenummer | MCH3376-TL-E |
---|---|
Zukünftige Teilenummer | FT-MCH3376-TL-E |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
MCH3376-TL-E Status (Lebenszyklus) | Auf Lager |
Teilestatus | Not For New Designs |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 1.5A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 241 mOhm @ 750mA, 4.5V |
Vgs (th) (Max) @ Id | 1.4V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 1.7nC @ 4.5V |
Vgs (Max) | ±10V |
Eingangskapazität (Ciss) (Max) @ Vds | 120pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 800mW (Ta) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 3-MCPH |
Paket / fall | 3-SMD, Flat Leads |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
MCH3376-TL-E Gewicht | kontaktiere uns |
Ersatzteilnummer | MCH3376-TL-E-FT |
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